Zaininger, K. H.: search on Z-Library

Zaininger, K.H., Warfield, G.

Year:

1964

Language:

english

File:

PDF, 734 KB

english, 1964

Limitations of the MOS capacitance method for the determination of semiconductor surface properties

Journal:

Revesz, A.G., Zaininger, K.H.

Year:

1965

Language:

english

File:

PDF, 1.64 MB

english, 1965

The influence of oxidation and high temperature treatment on MOS device characteristics

Journal:

Revesz, A.G., Zaininger, K.H.

Year:

1965

Language:

english

File:

PDF, 363 KB

english, 1965

The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2system

Journal:

Year:

1966

Language:

english

File:

PDF, 1.14 MB

english, 1966

The effect of high energy electron bombardment on MOS structures

Journal:

Waxman, A., Zaininger, K.H.

Year:

1966

Language:

english

File:

PDF, 364 KB

english, 1966

MOS transistors and integrated circuits with plasma-grown aluminum oxide

Journal:

Zaininger, K.H., Waxman, A.S.

Year:

1969

Language:

english

File:

PDF, 181 KB

english, 1969

Radiation resistance of Al2O3MOS devices

Journal:

Year:

1969

Language:

english

File:

PDF, 633 KB

english, 1969

Change in editorial board

Journal:

Year:

1978

Language:

english

File:

PDF, 422 KB

english, 1978

Changes in the editorial board

Journal:

Zaininger, H.W., Bell, D.J.

Year:

1979

Language:

english

File:

PDF, 526 KB

english, 1979

Potential Dynamic Impacts of Wind Turbines on Utility Systems

Journal:

IEEE Transactions on Power Apparatus and Systems

Year:

1981

Language:

english

File:

PDF, 1.49 MB

english, 1981

Electromagnetic Pulse and the Electric Power Network

Klein, K.W., Barnes, P.R., Zaininger, H.W.

Journal:

IEEE Transactions on Power Apparatus and Systems

Year:

1985

Language:

english

File:

PDF, 1.45 MB

english, 1985

The Physics of Failure of MIS Devices Under Radiation

Holmes-Siedle, A. G., Zaininger, Karl H.

Journal:

IEEE Transactions on Reliability

Year:

1968

Language:

english

File:

PDF, 2.45 MB

english, 1968

Electromagnetic Pulse and the Electric Power Network

Klein, Kenneth W., Barnes, Paul R., Zaininger, Henry W.

Journal:

IEEE Power Engineering Review

Year:

1985

Language:

english

File:

PDF, 423 KB

english, 1985

Process Techniques and Radiation Effects in Metal-Insulator Semiconductor Structures

Dennehy, W. J., Holmes-Siedle, A. G., Zaininger, K. H.

Journal:

IEEE Transactions on Nuclear Science

Year:

1967

Language:

english

File:

PDF, 1.36 MB

english, 1967

Permanent Radiation Effects in Hardened Al2O3 MOS Integrated Circuits

Micheletti, F. B., Zaininger, K. H.

Journal:

IEEE Transactions on Nuclear Science

Year:

1970

Language:

english

File:

PDF, 1.02 MB

english, 1970

Irradiation of MIS Capacitors with High Energy Electrons

Zaininger, K. H.

Journal:

IEEE Transactions on Nuclear Science

Year:

1966

Language:

english

File:

PDF, 1.72 MB

english, 1966

Potential Dynamic Impacts of Wind Turbines on Utility Systems

Zaininger, H. W., Bell, D. J.

Journal:

IEEE Power Engineering Review

Year:

1981

Language:

english

File:

PDF, 219 KB

english, 1981

Thin film dielectric materials for microelectronics

Zaininger, K.H., Chih-Chun Wang,

Journal:

Year:

1969

Language:

english

File:

PDF, 771 KB

english, 1969

Preparation, Optical and Dielectric Properties of Vapor-Deposited Niobium Oxide Thin Films

Duffy, M. T., Wang, C. C., Waxman, A., Zaininger, K. H.

Journal:

Waxman, A., Zaininger, K.H.

Year:

1969

Language:

english

File:

PDF, 821 KB

english, 1969

[IRE 1968 International Electron Devices Meeting - ()] 1968 International Electron Devices Meeting - MOS transistors and integrated circuits with plasma-grown aluminum oxide

Year:

1968

Language:

english

File:

PDF, 65 KB

english, 1968

Hydrogen induced surface states at a Si–SiO2interface

Zaininger, K.H., Warfield, G.

Journal:

Hofstein, S.R., Zaininger, K.H., Warfield, G.

Year:

1964

Language:

english

File:

PDF, 283 KB

english, 1964

[IEEE Fifth Annual Symposium on the Physics of Failure in Electronics - Columbus, OH, USA (1966.11.15-1966.11.17)] Fifth Annual Symposium on the Physics of Failure in Electronics - Degradation of Mis Devices Under Electron Bombardment

Zaininger, K. H.

Year:

1966

File:

PDF, 12.65 MB

1966

Frequency response of the surface inversion layer in silicon

Journal:

Heiman, F.P., Zaininger, K.H., Warfield, G.

Year:

1964

Language:

english

File:

PDF, 261 KB

english, 1964

ELECTRON BOMBARDMENT OF MOS CAPACITORS

Zaininger, K. H.

Journal:

Applied Physics Letters

Year:

1966

Language:

english

File:

PDF, 472 KB

english, 1966

Determination of conductivity type from MOS-capacitance measurements

Journal:

Zaininger, K. H., Revesz, A. G.

Year:

1964

Language:

english

File:

PDF, 242 KB

english, 1964

INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON THE DENSITY OF SURFACE STATES IN THE Si[Single Bond]SiO2 SYSTEM

Journal:

Applied Physics Letters

Year:

1965

Language:

english

File:

PDF, 401 KB

english, 1965

Automatic display of C-V curves for metal-insulator-semiconductor (MIS) structures

Journal:

Revesz, A. G., Zaininger, K. H.

Year:

1966

Language:

english

File:

PDF, 220 KB

english, 1966

Discussion of “The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam” [B. E. Deal (pp. 527–533, Vol. 110, No. 6)]

Journal:

Revesz, A. G., Zaininger, K. H., Evans, R. J.

Year:

1963

Language:

english

File:

PDF, 130 KB

english, 1963

Reduction of Radiation Sensitivity in MOS Structures by Aluminum Doping of Silicon Dioxide

Journal:

Cullen, G. W., Gottlieb, G. E., Wang, C. C., Zaininger, K. H.

Year:

1969

Language:

english

File:

PDF, 323 KB

english, 1969

Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal Spinel

Journal: